Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering Tucto Salinas K.Y. es_PE Flores Escalante L.F. es_PE Guerra Torres J.A. es_PE Grieseler R. es_PE Kups T. es_PE Pezoldt J. es_PE Osvet A. es_PE Batentschuk M. es_PE Weingärtner R. es_PE 2024-05-30T23:13:38Z 2024-05-30T23:13:38Z 2017
dc.description This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.
dc.description.abstract Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.
dc.description.sponsorship Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - Concytec
dc.identifier.isbn 9783035710281
dc.identifier.scopus 2-s2.0-85016419055
dc.language.iso eng
dc.publisher Trans Tech Publications Ltd
dc.relation.ispartof Materials Science Forum
dc.rights info:eu-repo/semantics/openAccess
dc.subject X ray diffraction analysis
dc.subject Aluminum es_PE
dc.subject Aluminum coatings es_PE
dc.subject Aluminum nitride es_PE
dc.subject Annealing es_PE
dc.subject Cathodoluminescence es_PE
dc.subject Heat treatment es_PE
dc.subject Light es_PE
dc.subject Light emission es_PE
dc.subject Luminescence es_PE
dc.subject Luminescence of inorganic solids es_PE
dc.subject Nitrides es_PE
dc.subject Radio waves es_PE
dc.subject Rapid thermal processing es_PE
dc.subject Rare earths es_PE
dc.subject Terbium es_PE
dc.subject Thin films es_PE
dc.subject Wide band gap semiconductors es_PE
dc.subject Aluminum nitride thin films es_PE
dc.subject Annealing techniques es_PE
dc.subject Energy dispersive x-ray es_PE
dc.subject Luminescence properties es_PE
dc.subject Photo-luminescence excitation es_PE
dc.subject Post annealing treatment es_PE
dc.subject Post deposition annealing es_PE
dc.subject Radio frequency magnetron sputtering es_PE
dc.subject Magnetron sputtering es_PE
dc.title Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
dc.type info:eu-repo/semantics/conferenceObject