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Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
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Fecha
2017
Autores
Tucto Salinas K.Y.
Flores Escalante L.F.
Guerra Torres J.A.
Grieseler R.
Kups T.
Pezoldt J.
Osvet A.
Batentschuk M.
Weingärtner R.
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Trans Tech Publications Ltd
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Abstracto
Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.
Descripción
This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.
Palabras clave
X ray diffraction analysis,
Aluminum,
Aluminum coatings,
Aluminum nitride,
Annealing,
Cathodoluminescence,
Heat treatment,
Light,
Light emission,
Luminescence,
Luminescence of inorganic solids,
Nitrides,
Radio waves,
Rapid thermal processing,
Rare earths,
Terbium,
Thin films,
Wide band gap semiconductors,
Aluminum nitride thin films,
Annealing techniques,
Energy dispersive x-ray,
Luminescence properties,
Photo-luminescence excitation,
Post annealing treatment,
Post deposition annealing,
Radio frequency magnetron sputtering,
Magnetron sputtering