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http://hdl.handle.net/20.500.12390/2839


Campo DCValorIdioma
dc.contributor.authorPreissler, Nataliees_PE
dc.contributor.authorAmkreutz, Danieles_PE
dc.contributor.authorDulanto, Jorgees_PE
dc.contributor.authorTofflinger, Jan Amarues_PE
dc.contributor.authorCham Thi Trinhes_PE
dc.contributor.authorTrahms, Martinaes_PE
dc.contributor.authorAbou-Ras, Danieles_PE
dc.contributor.authorKirmse, Holmes_PE
dc.contributor.authorWeingartner, Rolandes_PE
dc.contributor.authorRech, Berndes_PE
dc.contributor.authorSchlatmann, Rutgeres_PE
dc.date.accessioned2021-09-05T04:49:37Z-
dc.date.available2021-09-05T04:49:37Z-
dc.date.issued2018-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/20.500.12390/2839-
dc.description.abstractSilicon nitride (SiNx) and silicon oxide (SiOx) grown with plasma-enhanced chemical vapor deposition are used to passivate the front-side of liquid-phase crystallized silicon (LPC-Si). The dielectric layer/LPC-Si interface is smooth and layers are well-defined as demonstrated with transmission electron microscopy. Using electron energy loss spectroscopy a thin silicon oxynitride is detected which is related to oxidation of the SiNx prior to the silicon deposition. The interface defect state density (D-it) and the effective fixed charge density (Q(IL,eff)) are obtained from high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on SiOx/SiNx/LPC-Si and SiOx/SiNx/SiOx/LPC-Si sequences. Charge transfer across the SiNx/LPC-Si interface is observed which does not occur with the thin SiOx between SiNx and LPC-Si. The SiOx/SiNx/LPC-Si interface is characterized by Q(IL,eff)>10(12)cm(-2) and D-it,D-MG>10(12)eV(-1)cm(-2). With SiOx/SiNx/SiOx stack, both parameters are around one order of magnitude lower. Based on obtained Q(IL,eff) and D-it(E) and capture cross sections for electrons and holes of sigma(n)=10(-14)cms(-1) and sigma(p)=10(-16)cms(-1), respectively, a front-side surface recombination velocity in the range of 10cms(-1) at both interfaces is determined using the extended Shockley-Read-Hall recombination model. Results indicate that field-effect passivation is strong, especially with SiOx/SiNx stack.es
dc.description.sponsorshipConsejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - Concyteces_PE
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherWileyes_PE
dc.relation.ispartofPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEes
dc.rightsinfo:eu-repo/semantics/closedAccesses
dc.subjectMaterials Chemistryes_PE
dc.subjectElectrical and Electronic Engineeringes_PE
dc.subjectSurfaceses_PE
dc.subjectCoatings and Filmses_PE
dc.subjectSurfaces and Interfaceses_PE
dc.subjectCondensed Matter Physicses_PE
dc.subjectElectronices_PE
dc.subjectOptical and Magnetic Materialses_PE
dc.titlePassivation of Liquid-Phase Crystallized Silicon With PECVD-SiNx and PECVD-SiNx/SiOxes
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doihttps://doi.org/10.1002/pssa.201800239-
dc.subject.ocdehttp://purl.org/pe-repo/ocde/ford#2.05.01-
dc.relation.isFundedBy132-2017es
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
item.fulltextNo texto completo-
item.languageiso639-1en-
item.grantfulltextnone-
Colección:3.1 Estancias en cooperación internacional
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