Publicación:
Passivation of Liquid-Phase Crystallized Silicon With PECVD-SiNx and PECVD-SiNx/SiOx
Passivation of Liquid-Phase Crystallized Silicon With PECVD-SiNx and PECVD-SiNx/SiOx
| dc.contributor.author | Preissler, Natalie | es_PE |
| dc.contributor.author | Amkreutz, Daniel | es_PE |
| dc.contributor.author | Dulanto, Jorge | es_PE |
| dc.contributor.author | Tofflinger, Jan Amaru | es_PE |
| dc.contributor.author | Cham Thi Trinh | es_PE |
| dc.contributor.author | Trahms, Martina | es_PE |
| dc.contributor.author | Abou-Ras, Daniel | es_PE |
| dc.contributor.author | Kirmse, Holm | es_PE |
| dc.contributor.author | Weingartner, Roland | es_PE |
| dc.contributor.author | Rech, Bernd | es_PE |
| dc.contributor.author | Schlatmann, Rutger | es_PE |
| dc.date.accessioned | 2024-05-30T23:13:38Z | |
| dc.date.available | 2024-05-30T23:13:38Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | Silicon nitride (SiNx) and silicon oxide (SiOx) grown with plasma-enhanced chemical vapor deposition are used to passivate the front-side of liquid-phase crystallized silicon (LPC-Si). The dielectric layer/LPC-Si interface is smooth and layers are well-defined as demonstrated with transmission electron microscopy. Using electron energy loss spectroscopy a thin silicon oxynitride is detected which is related to oxidation of the SiNx prior to the silicon deposition. The interface defect state density (D-it) and the effective fixed charge density (Q(IL,eff)) are obtained from high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on SiOx/SiNx/LPC-Si and SiOx/SiNx/SiOx/LPC-Si sequences. Charge transfer across the SiNx/LPC-Si interface is observed which does not occur with the thin SiOx between SiNx and LPC-Si. The SiOx/SiNx/LPC-Si interface is characterized by Q(IL,eff)>10(12)cm(-2) and D-it,D-MG>10(12)eV(-1)cm(-2). With SiOx/SiNx/SiOx stack, both parameters are around one order of magnitude lower. Based on obtained Q(IL,eff) and D-it(E) and capture cross sections for electrons and holes of sigma(n)=10(-14)cms(-1) and sigma(p)=10(-16)cms(-1), respectively, a front-side surface recombination velocity in the range of 10cms(-1) at both interfaces is determined using the extended Shockley-Read-Hall recombination model. Results indicate that field-effect passivation is strong, especially with SiOx/SiNx stack. | |
| dc.description.sponsorship | Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - Concytec | |
| dc.identifier.doi | https://doi.org/10.1002/pssa.201800239 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12390/2839 | |
| dc.language.iso | eng | |
| dc.publisher | Wiley | |
| dc.relation.ispartof | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.subject | Surfaces and Interfaces | |
| dc.subject | Materials Chemistry | es_PE |
| dc.subject | Electrical and Electronic Engineering | es_PE |
| dc.subject | Surfaces | es_PE |
| dc.subject | Coatings and Films | es_PE |
| dc.subject | Condensed Matter Physics | es_PE |
| dc.subject | Electronic | es_PE |
| dc.subject | Optical and Magnetic Materials | es_PE |
| dc.subject.ocde | http://purl.org/pe-repo/ocde/ford#2.05.01 | |
| dc.title | Passivation of Liquid-Phase Crystallized Silicon With PECVD-SiNx and PECVD-SiNx/SiOx | |
| dc.type | info:eu-repo/semantics/article | |
| dspace.entity.type | Publication | |
| oairecerif.author.affiliation | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| oairecerif.author.affiliation | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| oairecerif.author.affiliation | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| oairecerif.author.affiliation | #PLACEHOLDER_PARENT_METADATA_VALUE# |