Publicación:
Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide

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dc.contributor.author Guerra J.A. es_PE
dc.contributor.author Montañez L.M. es_PE
dc.contributor.author Tucto K. es_PE
dc.contributor.author Angulo J. es_PE
dc.contributor.author Töfflinger J.A. es_PE
dc.contributor.author Winnaker A. es_PE
dc.contributor.author Weingärtner R. es_PE
dc.date.accessioned 2024-05-30T23:13:38Z
dc.date.available 2024-05-30T23:13:38Z
dc.date.issued 2016
dc.description This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J A Guerra) and by the National Council of Science and Technology (CONCYTEC) under the scholarships granted to the PUCP (J R Angulo and J Llamoza). The author would like to thank Prof Dr H P Strunk, F Benz and Dr Y Weng of the University of Stuttgart for the TEM measurements.
dc.description.abstract A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum. In principle, our model is applicable to any amorphous material and it allows the determination of the bandgap. Here we focus on the bandgap engineering of amorphous hydrogenated silicon carbide layers. Emphasis is given on the role of hydrogen dilution during the deposition process and post deposition annealing treatments. Using the conventional Urbach and Tauc equations, it was found that an increase/decrease of the Urbach energy produces a shrink/enhancement of the Tauc-gap. On the contrary, the here proposed model provides a bandgap energy which behaves independently of the Urbach energy.
dc.description.sponsorship Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - Concytec
dc.identifier.doi https://doi.org/10.1557/adv.2016.422
dc.identifier.scopus 2-s2.0-85018286606
dc.identifier.uri https://hdl.handle.net/20.500.12390/644
dc.language.iso eng
dc.publisher Materials Research Society
dc.relation.ispartof MRS Advances
dc.rights info:eu-repo/semantics/openAccess
dc.subject Thin films
dc.subject Absorption spectroscopy es_PE
dc.subject Amorphous films es_PE
dc.subject Amorphous materials es_PE
dc.subject Energy gap es_PE
dc.subject Hydrogenation es_PE
dc.subject Optical properties es_PE
dc.subject Silicon es_PE
dc.subject Silicon carbide es_PE
dc.subject Band gap energy es_PE
dc.subject Band gap engineering es_PE
dc.subject Deposition process es_PE
dc.subject General equations es_PE
dc.subject Hydrogen dilution es_PE
dc.subject Hydrogenated silicon carbide es_PE
dc.subject Post deposition annealing es_PE
dc.subject Simple modeling es_PE
dc.subject Amorphous silicon es_PE
dc.subject.ocde https://purl.org/pe-repo/ocde/ford#2.04.01
dc.title Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide
dc.type info:eu-repo/semantics/article
dspace.entity.type Publication
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