Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells

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Tucto K.
Flores L.
Guerra J.
Töfflinger J.
Dulanto J.
Grieseler R.
Osvet A.
Batentschuk M.
Weingärtner R.
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Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. The prepared samples were annealed from 150ºC to 850ºC in steps of 100ºC. By using energy dispersive X-ray analysis we measured the sample composition and the doping concentration. The emission intensities at different annealing temperatures were characterized using photoluminescence measurements upon excitation at 325 nm. The 5D4 → 7F5 main transition of Tb3+ and the characteristic near infrared emission at 980 nm of Yb3+ were recorded. In order to study the luminescence behavior of the samples in terms of a down conversion process, we have plotted the integrated areas of the main transition peaks versus the annealing temperature.
The authors would like to acknowledge the financial support of the Peruvian science foundation Cienciactiva in the framework of the DAAD-CONCYTEC joint project (2017-2019), the “Círculo de investigación” project and the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The research activity was performed in the framework of the doctoral scholarship of K. Tucto and L. Flores from CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYT-DE, respectively. The authors are also grateful to the Center of Microcharacterization (CAM) of the PUCP for the EDX and PL measurements.
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Ytterbium compounds, Aluminum compounds, Annealing, Cobalt compounds, Energy dispersive X ray analysis, Infrared devices, Luminescence, Nitrides, Photoelectrochemical cells, Photovoltaic cells, Rare earth elements, Semiconductor doping, Sputtering, Thin films, X ray diffraction analysis, Aluminum oxynitride, Aluminum oxynitride thin films, Annealing temperatures, Doping concentration, Near-infrared emissions, Photoluminescence measurements, Radio frequency magnetron sputtering, Silicon substrates