Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

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Guerra Torres, Jorge Andrés
Tucto K.
Montañez L.M.
De Zela F.
Töfflinger J.A.
Winnaker A.
Weingärtner R.
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Materials Research Society
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The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.
This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J.A. Guerra), the “Programa de repatriación” (J.A. Töfflinger), the Master scholarship (L.M. Montañez and K. Tucto) from CONCYTEC and the “Círculo de investigación” from CONCYTEC. The authors would like to thank Prof. Dr. A. R. Zanatta (IFSC-USP, Brazil) for providing access to his lab in order to perform the PL measurements and Prof. Dr. H. P. Strunk (University of Stuttgart, Germany) for helping us with the PLE measurements.
Palabras clave
Thin films, Amorphous materials, Annealing, Chemical activation, Luminescence, Silicon carbide, Terbium, Light emission intensity, Luminescence enhancements, Optically active ions, Rate-equation models, Amorphous films