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Silicon interface passivation studied by modulated surface photovoltage spectroscopy

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dc.contributor.author Dulanto J. es_PE
dc.contributor.author Sevillano-Bendezu M.A. es_PE
dc.contributor.author Grieseler R. es_PE
dc.contributor.author Guerra Torres, Jorge Andrés es_PE
dc.contributor.author Korte L. es_PE
dc.contributor.author Dittrich T. es_PE
dc.contributor.author Tofflinger J.A. es_PE
dc.date.accessioned 2024-05-30T23:13:38Z
dc.date.available 2024-05-30T23:13:38Z
dc.date.issued 2021
dc.description.abstract We demonstrate that the modulated surface photovoltage spectroscopy (modulated SPS) technique can be applied to investigate interface states in the bandgap, i.e. interface passivation, of crystalline silicon coated with a downshift layer such as hydrogenated aluminum nitride with embedded terbium ions by suppressing straylight with a cut-off filter. Different hydrogen contents influence the surface photovoltage spectra at photon energies below the bandgap of crystalline silicon. Modulated SPS reveals that at higher hydrogen content there is a lower signal and, thus, a lower density of surface defect states. Our experiments show that modulated SPS can become a powerful tool for characterizing defect states at interfaces which cannot be easily studied by other methods. © 2021 Published under licence by IOP Publishing Ltd.
dc.description.sponsorship Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - Concytec
dc.identifier.doi https://doi.org/10.1088/1742-6596/1841/1/012003
dc.identifier.scopus 2-s2.0-85103344374
dc.identifier.uri https://hdl.handle.net/20.500.12390/2366
dc.language.iso eng
dc.publisher IOP Publishing Ltd
dc.relation.ispartof Journal of Physics: Conference Series
dc.rights info:eu-repo/semantics/openAccess
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject Surface properties
dc.subject Aluminum coatings es_PE
dc.subject Aluminum metallography es_PE
dc.subject Aluminum nitride es_PE
dc.subject Energy gap es_PE
dc.subject Hydrogen es_PE
dc.subject Passivation es_PE
dc.subject Semiconductor materials es_PE
dc.subject Silicon es_PE
dc.subject Solar energy es_PE
dc.subject Solar power generation es_PE
dc.subject Surface defects es_PE
dc.subject.ocde http://purl.org/pe-repo/ocde/ford#1.03.01
dc.title Silicon interface passivation studied by modulated surface photovoltage spectroscopy
dc.type info:eu-repo/semantics/article
dspace.entity.type Publication
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