Publicación:
Silicon interface passivation studied by modulated surface photovoltage spectroscopy
Silicon interface passivation studied by modulated surface photovoltage spectroscopy
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Fecha
2021
Autores
Dulanto J.
Sevillano-Bendezu M.A.
Grieseler R.
Guerra Torres, Jorge Andrés
Korte L.
Dittrich T.
Tofflinger J.A.
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IOP Publishing Ltd
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Abstracto
We demonstrate that the modulated surface photovoltage spectroscopy (modulated SPS) technique can be applied to investigate interface states in the bandgap, i.e. interface passivation, of crystalline silicon coated with a downshift layer such as hydrogenated aluminum nitride with embedded terbium ions by suppressing straylight with a cut-off filter. Different hydrogen contents influence the surface photovoltage spectra at photon energies below the bandgap of crystalline silicon. Modulated SPS reveals that at higher hydrogen content there is a lower signal and, thus, a lower density of surface defect states. Our experiments show that modulated SPS can become a powerful tool for characterizing defect states at interfaces which cannot be easily studied by other methods. © 2021 Published under licence by IOP Publishing Ltd.
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Palabras clave
Surface properties,
Aluminum coatings,
Aluminum metallography,
Aluminum nitride,
Energy gap,
Hydrogen,
Passivation,
Semiconductor materials,
Silicon,
Solar energy,
Solar power generation,
Surface defects