Silicon interface passivation studied by modulated surface photovoltage spectroscopy

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Angulo J.R.
Calsi B.X.
Conde L.A.
De La Casa J.
Guerra Torres, Jorge Andrés
Montes-Romero J.
Tofflinger J.A.
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IOP Publishing Ltd
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We demonstrate that the modulated surface photovoltage spectroscopy (modulated SPS) technique can be applied to investigate interface states in the bandgap, i.e. interface passivation, of crystalline silicon coated with a downshift layer such as hydrogenated aluminum nitride with embedded terbium ions by suppressing straylight with a cut-off filter. Different hydrogen contents influence the surface photovoltage spectra at photon energies below the bandgap of crystalline silicon. Modulated SPS reveals that at higher hydrogen content there is a lower signal and, thus, a lower density of surface defect states. Our experiments show that modulated SPS can become a powerful tool for characterizing defect states at interfaces which cannot be easily studied by other methods. © 2021 Published under licence by IOP Publishing Ltd.
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Surface properties