Publicación:
Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon
Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon
| dc.contributor.author | Sevillano-Bendezu, M. A. | es_PE |
| dc.contributor.author | Dulanto, J. A. | es_PE |
| dc.contributor.author | Conde, L. A. | es_PE |
| dc.contributor.author | Grieseler, R. | es_PE |
| dc.contributor.author | Guerra, J. A. | es_PE |
| dc.contributor.author | Tofflinger, J. A. | es_PE |
| dc.date.accessioned | 2024-05-30T23:13:38Z | |
| dc.date.available | 2024-05-30T23:13:38Z | |
| dc.date.issued | 2020 | |
| dc.description.abstract | Surface passivation is a widely used technique to reduce the recombination losses at the semiconductor surface. The passivating layer performance can be mainly characterized by two parameters: The fixed charge density (Q(ox)) and the interface trap density (D-it) which can be extracted from Capacitance-Voltage measurements (CV). In this paper, simulations of High-Frequency Capacitance-Voltage (HF-CV) curves were developed using simulated passivation parameters in order to examine the reliability of measured results. The D-it was modelled by two different sets of functions: First, the sum of Gaussian functions representing different dangling bond types and exponential tails for strained bonds. Second, a simpler U-shape model represented by the sum of exponential tails and a constant value function was employed. These simulations were validated using experimental measurements of a reference sample based on silicon dioxide on crystalline silicon (SiO2/c-Si). Additionally, a fitting process of HF-CV curves was proposed using the simple U-shape D-it model. A relative error of less than 0.4% was found comparing the average values between the approximated and the experimentally extracted D-it's. The constant function of the approximated D-it represents an average of the experimentally extracted D-it for values around the midgap energy where the recombination efficiency is highest. | |
| dc.description.sponsorship | Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica - Concytec | |
| dc.identifier.doi | https://doi.org/10.1088/1742-6596/1433/1/012007 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12390/2815 | |
| dc.language.iso | eng | |
| dc.publisher | IOP Publishing | |
| dc.relation.ispartof | PERUVIAN WORKSHOP ON SOLAR ENERGY (JOPES 2019) | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.subject | General Physics and Astronomy | |
| dc.subject.ocde | http://purl.org/pe-repo/ocde/ford#1.03.03 | |
| dc.title | Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon | |
| dc.type | info:eu-repo/semantics/article | |
| dspace.entity.type | Publication |