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http://hdl.handle.net/20.500.12390/2839


Título: Passivation of Liquid-Phase Crystallized Silicon With PECVD-SiNx and PECVD-SiNx/SiOx
Autor(es): Preissler, Natalie 
Amkreutz, Daniel 
Dulanto, Jorge 
Tofflinger, Jan Amaru 
Cham Thi Trinh 
Trahms, Martina 
Abou-Ras, Daniel 
Kirmse, Holm 
Weingartner, Roland 
Rech, Bernd 
Schlatmann, Rutger 
Resumen: Silicon nitride (SiNx) and silicon oxide (SiOx) grown with plasma-enhanced chemical vapor deposition are used to passivate the front-side of liquid-phase crystallized silicon (LPC-Si). The dielectric layer/LPC-Si interface is smooth and layers are well-defined as demonstrated with transmission electron microscopy. Using electron energy loss spectroscopy a thin silicon oxynitride is detected which is related to oxidation of the SiNx prior to the silicon deposition. The interface defect state density (D-it) and the effective fixed charge density (Q(IL,eff)) are obtained from high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on SiOx/SiNx/LPC-Si and SiOx/SiNx/SiOx/LPC-Si sequences. Charge transfer across the SiNx/LPC-Si interface is observed which does not occur with the thin SiOx between SiNx and LPC-Si. The SiOx/SiNx/LPC-Si interface is characterized by Q(IL,eff)>10(12)cm(-2) and D-it,D-MG>10(12)eV(-1)cm(-2). With SiOx/SiNx/SiOx stack, both parameters are around one order of magnitude lower. Based on obtained Q(IL,eff) and D-it(E) and capture cross sections for electrons and holes of sigma(n)=10(-14)cms(-1) and sigma(p)=10(-16)cms(-1), respectively, a front-side surface recombination velocity in the range of 10cms(-1) at both interfaces is determined using the extended Shockley-Read-Hall recombination model. Results indicate that field-effect passivation is strong, especially with SiOx/SiNx stack.
Tema: Materials Chemistry;Electrical and Electronic Engineering;Surfaces;Coatings and Films;Surfaces and Interfaces;Condensed Matter Physics;Electronic;Optical and Magnetic Materials
Editorial: Wiley
Fecha de publicación: 2018
Publicado en: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 
Financiamiento: 132-2017 
Tipo de publicación: info:eu-repo/semantics/article
Identificador Handle: http://hdl.handle.net/20.500.12390/2839
DOI: 10.1002/pssa.201800239
Nivel de acceso: info:eu-repo/semantics/closedAccess
Colección:3.1 Estancias en cooperación internacional

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